@inproceedings{benalcazar2018capacitance,
  author={Benalcàzar, Diego R. and Garzón, Esteban and Trojman, Lionel},
  booktitle={2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM)}, 
  title={{Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique}}, 
  year={2018},
  volume={},
  number={},
  pages={1-5},
  doi={10.1109/ETCM.2018.8580289}
}